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电子电路代写 | ESE 461: Design Automation for Integrated Circuit Systems Homework 4

电子电路代写 | ESE 461: Design Automation for Integrated Circuit Systems Homework 4


1. [CMOS Inverter Power Dissipation] This is a follow-up problem for homework 3 problem 3. Using the
same circuits (as shown in the figure) and the results obtained from the previous sub-questions,
determine a closed form expression for the power consumption in the circuit. Consider only gate
capacitances in your analysis. What is the dynamic power consumption for a supply voltage of 2.5𝑉𝑉 and
an activity factor of 1?

2. [Static Behavior of Complementary CMOS] The AND-OR-INVERT (AOI) and OR-AND-INVERT (OAI)
gates are two types of widely used standard cells in the digital IC design. The OAI322 gate means
logically the gate is composed of three OR gates, one AND gate, and one INV gate (inverter). The
number of the inputs of the OR gates are 3, 2, 2 respectively. The outputs of the of the OR gates will
drive the AND gate, and the output of the AND gate will drive the INV gate. The function of the OAI322
gate can be expressed as:

(a) Use the complementary CMOS to implement the above OAI322 gate. Derive the expressions for
both pull-down and pull-up networks, and draw the schematic of the digital circuit.

(b) Suppose the size of all the NMOS is (W/L)𝑁𝑁𝑁𝑁𝑁𝑁𝑁𝑁 = 2 and the size of all the PMOS is
pull-down and pull-up networks under the best and worst cases respectively.

Hint: The best case means that under this input pattern, the output resistance of the network is
the lowest. The output resistance is the equivalent resistance of the network seen from the
output 𝑌𝑌 to the ground (if pull-down network) or the power supply (if pull-up network), which is
the equivalent resistance of the network’s 𝑅𝑅𝑃𝑃𝑁𝑁 when the network is on.